Introduction
Wide Band-Gap devices, such as GaN offer several advantages over GaAs, including higher operating voltage (over 100V breakdown), higher operating temperature (over 150°C channel temperature), and higher power density (5-30W/mm). Despite these obvious advantages, the large output power capability presents a great deal of heat dissipation. SiC has an impressive thermal conductivity, but for large periphery GaN devices, it is not sufficient for eliminating thermal effects. GaN HEMTs can also suffer from the effects of trapping in the surface passivation along the gate width.