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Services Offered |
Measurement Parameters |
Measurement Capability |
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DC and Pulsed IV Measurements | Fixed and swept voltages and currents for Id, Ig, Vd, Vg and computation of gm | On-wafer and in-fixture DC and pulsed IV characterization up to 1000V and 30A | ||
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CW and Pulsed S-Parameters | Two-port S-parameter (S11, S12, S21, S22) characterization at user-defined reference plane | On-wafer and in-fixture CW and pulsed-CW S-parameter measurements between 10 MHz and 67 GHz | ||
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Noise Figure / Parameters Measurements | Noise figure: NF50 Noise parameters: NF50, NFmin, Γopt, Rn, noise circles(all noise measurements performed in screen room / Faraday cage) |
On-wafer and in-fixture measurements Noise Figure – 10 MHz to 50 GHz Noise Parameters – 400 MHz to 67 GHz |
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Power Measurements - CW and Pulsed-CW Signals |
Power parameters including available and delivered input power (Pin), delivered output power (Pout) at individual frequencies, transducer and power gain, power-added and drain efficiency, intermodulation distortion products (IMD, if applicable) | On-wafer and in-fixture power measurements between 10 MHz and 67 GHz CW and pulsed-CW, single-tone and two-tone RF signal DC and pulsed bias conditions Fixed and swept impedance at fundamental and harmonic frequencies |
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Power Measurements - Modulated Signals |
In addition to power parameters above, modulated parameters including adjacent channel power/leakage (ACLR/ACPR) and error vector magnitude (EVM) | On-wafer and in-fixture power measurements between 400 MHz and 40 GHz using commercial and user-defined modulated signal | ||
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Power Measurements - Nonlinear VNA (NVNA) |
In addition to power parameters above, nonlinear time-domain current and voltage waveforms and RF load lines | On-wafer and in-fixture power measurements between 400 MHz and 40 GHz | ||
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