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On-wafer GaN Power Semiconductor Characterization

October 16 2014

Maury Microwave presented its paper "On-wafer GaN Power Semiconductor Characterization" at Cascade Microtech's 2014 Users' Community (COMPASS) in Rome.

This presentation covered the motivation and challenges related to characterizing Gallium Nitride transistors on-wafer, including how to handle simultaneously high voltages and currents while at the same time providing undistorted narrow-pulse widths to eliminate self-heating effects. Proper equipment selection, best practices and calibration and GaN transistor measurements were presented.

More information regarding Power Semiconductor Parametric Analysis can be found here.

The COMPASS 2014 presentation regarding On-wafer GaN Power Semiconductor Characterization can be found here.



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