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New Application Note on Compact Transistor Models
March 28 2012
Maury Microwave has released its latest application note regarding transistor modeling, written by partner AMCAD Engineering and featured in the March edition of the Microwave Journal.
Article "Compact Transistor Models: The Roadmap to First-Pass Amplifier Design Success" covers the compact transistor modeling extraction flow, including: s-parameters to determine the extrinsic and intrinsic elements, Pulsed IV measurements to extract the diode and current source model parameters under quasi-isothermal conditions, Pulsed S parameter measurements to extract the nonlinear capacitance models that are needed for simulations in large signal operating conditions, electro-thermal and trapping effects, and modeling validation through frequency-domain and time-domain load pull measurements.
Maury Microwave Application Note 5A-052 “Compact Transistor Models: The Roadmap to First-Pass Amplifier Design Success!” is available for download here.