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A Robust, Large-Signal Model for LDMOS RF Power Transistors
January 27 2017
Engineers at Ampleon in the Netherlands recently published an article in MW&RF Magazine titled "A Robust, Large-Signal Model for LDMOS RF Power Transistors"
The article explains Ampleon's modeling design flow used to extract large signal LDMOS models for highly advanced amplifier applications.
The design flow makes use of Maury Microwave tools including:
- AMCAD pulsed IV system
- IVCAD measurement and modeling device characterization software
- Automated impedance tuners
- MT2000 mixed-signal active load pull system
The original MW&RF article can be found online or as a PDF.