Location:
Meeting Room A404 At the Georgia World Congress Center, in Atlanta, Georgia, USA
 
Date & Start Time:
June 18, 2008 - 10:30 AM
 
Hosted By:
Maury Microwave with Agilent Technologies and Cascade Microtech
 

 
Who Should Attend?:
Anyone involved in device impedance matching (non 50 ohm), power amp design, stability/ruggedness
testing, filter design, noise parameter measurement or design verification in the RF/Microwave industry.
See "Contact Information For This Event" (below) for certain restrictions on attendance.

Agenda:
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• 10:30 am/ 11:10 am (40 mins)
• Paper Abstract: “Learn how to import, display and simulate your measured Load Pull
data using the Load Pull Application Guide in Agilent EEsof’s ADS”
• Presented by: Keefe Bohannan, Agilent Technologies
This presentation:
1) provides an overview of load pull simulation in ADS,
2) guides you through using the new Load Pull Application Guide to import measured load
pull data from Maury Microwave load pull systems,
3) shows how to create a behavioral model and simulate using the AC, Harmonic Balance
and Circuit Envelope simulators to verify performance, and
4) demonstrates how to analyze and optimize a power amplifier matching network.
Load Pull Overview
Importing Maury Microwave data using the Load Pull Application Guide
Behavioral Model simulation
PA Analysis and Design using the measured load pull data
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• 11:10 am/ 11:15 am (5 mins) Break

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• 11:15 am/ 11:55 am (40 mins)
• Paper Abstract: “Active Device Characterization on the New PNA-X Network Analyzer”
• Presented by: David Ballo, Agilent Technologies

Based on the popular PNA network analyzer, the Agilent N5242A PNA-X Network Analyzer is a relatively new instrument that was designed from the ground up to be an active device measurement platform. It was designed to not only be ATE system friendly but to actually reduce the complexity of the ATE systems in which it may be deployed. Throughout the presentation, these and other features will be highlighted.   This presentation will include a comprehensive list of basic and advanced Amplifier, Mixer, and Converter measurements that can be performed with the Agilent N5242A PNA-X Network Analyzer. It will cover the measurement science, calibration and the theory of operation as well as a live demonstration of some select measurements (time permitting). Wherever applicable, common pitfalls and best practices for making these measurements both in R&D and production environments will be pointed out.

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• 11:55 am/ 12:05 am (10 mins) Break - Box Lunches Distributed

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• 12:05 pm/ 12:45 pm (40 mins)
• Paper Abstract: “Load Pull with High Gamma Tuners”
• Presented by: Gary Simpson, Maury Microwave

Automated Load pull has become a standard tool for characterizing devices operating in other than ideal 50 ohm environments. This presentation will review best practices and highlight considerations to be aware of in making these measurements. Additionally this presentation will stress how the latest advances in tuner technology can be used to overcome previous limitations to provide high gamma, thus a more thorough evaluation, and will discuss methods to improve accuracy and repeatability.

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• 12:45 pm/ 12:50 pm (5 mins) Break

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• 12:50 pm/ 1:30 pm (40 mins)
• Paper Abstract: “Accurate and repeatable wafer-level RF measurements at higher
current for characterization of linear power amplifiers and other RF power devices”
• Presented by: Terry Burcham, Cascade Microtech

The rapid growth of wireless voice and data traffic has resulted in demand for more RF power devices in both handsets and wireless system infrastructure. The design of RF power devices and linear power amplifiers that use them requires measurements of gain, linearity, and efficiency under various load conditions to optimize circuit designs. During characterization, transistor performance is established by varying source and load impedance. This paper will demonstrate how new, high-current probes allow designers to model transistors under load conditions at up to 2 amperes, while maintaining low contact resistance (typically < 0.05 ohm on aluminum pads). Some applications where device measurements are made at higher power levels include: Characterization of Adjacent Channel Power Ratio (ACPR), inter-modulation distortion, error-vector magnitude (EVM), or power-added efficiencies Extraction of power transistor models Optimization of RF power transistors for handsets, built in gallium arsenide (GaAs), silicon, or silicon-germanium (SiGe)  Mismatch characterization of handset power amplifiers

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Contact Information For This Event

Attendance is by invitation only! This event and the materials presented are intended for the informational use of RF Device Characterization Solution users who are or who may be customers of Maury Microwave, Agilent Technologies, or Cascade Microtech. Those interested in attending this event should contact the Maury Sales Department (Email: maury@maurymw.com) to reserve seating. Maury Microwave reserves the right to restrict attendance, and may deny admission to anyone without a valid reservation or invitation.